| Fabricante | |
| Código de Pieza del Fabricante | 2N7002K |
| Código de Pieza EBEE | E822379475 |
| Paquete | SOT-23 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | None |
| Descripción | 60V 340mA 350mW 900mΩ@10V,500mA 2.5V@1mA 1 N-Channel SOT-23 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 50+ | $0.0159 | $ 0.7950 |
| 500+ | $0.0128 | $ 6.4000 |
| 3000+ | $0.0100 | $ 30.0000 |
| 6000+ | $0.0090 | $ 54.0000 |
| 24000+ | $0.0081 | $ 194.4000 |
| 51000+ | $0.0076 | $ 387.6000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | hongjiacheng 2N7002K | |
| RoHS | ||
| Tipo | N-Channel | |
| Configuración | - | |
| RDS (on) | 900mΩ@10V;1.1Ω@4.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 10pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Current - Continuous Drain(Id) | 340mA | |
| Ciss-Input Capacitance | 40pF | |
| Gate Charge(Qg) | - |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 50+ | $0.0159 | $ 0.7950 |
| 500+ | $0.0128 | $ 6.4000 |
| 3000+ | $0.0100 | $ 30.0000 |
| 6000+ | $0.0090 | $ 54.0000 |
| 24000+ | $0.0081 | $ 194.4000 |
| 51000+ | $0.0076 | $ 387.6000 |
