| Fabricante | |
| Código de Pieza del Fabricante | 2N7002 |
| Código de Pieza EBEE | E87420321 |
| Paquete | SOT-23 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 60V 115mA 5Ω@10V,0.5A 225mW 2.5V@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 50+ | $0.0159 | $ 0.7950 |
| 500+ | $0.0132 | $ 6.6000 |
| 3000+ | $0.0102 | $ 30.6000 |
| 6000+ | $0.0093 | $ 55.8000 |
| 24000+ | $0.0085 | $ 204.0000 |
| 51000+ | $0.0081 | $ 413.1000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | hongjiacheng 2N7002 | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 900mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 225mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Current - Continuous Drain(Id) | 115mA | |
| Ciss-Input Capacitance | 50pF | |
| Output Capacitance(Coss) | 25pF | |
| Gate Charge(Qg) | 1.6nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 50+ | $0.0159 | $ 0.7950 |
| 500+ | $0.0132 | $ 6.6000 |
| 3000+ | $0.0102 | $ 30.6000 |
| 6000+ | $0.0093 | $ 55.8000 |
| 24000+ | $0.0085 | $ 204.0000 |
| 51000+ | $0.0081 | $ 413.1000 |
