| Fabricante | |
| Código de Pieza del Fabricante | HB3710P |
| Código de Pieza EBEE | E8271447 |
| Paquete | TO-263-2 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 100V 70A 15mΩ@10V,35A 200W 2V@250uA 1 N-channel TO-263-2 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.5210 | $ 0.5210 |
| 10+ | $0.4211 | $ 4.2110 |
| 50+ | $0.3521 | $ 17.6050 |
| 100+ | $0.2996 | $ 29.9600 |
| 500+ | $0.2759 | $ 137.9500 |
| 1000+ | $0.2614 | $ 261.4000 |
| 2000+ | $0.2578 | $ 515.6000 |
| 4000+ | $0.2560 | $ 1024.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | HL(Haolin Elec) HB3710P | |
| RoHS | ||
| Temperatura de funcionamiento | -55℃~+175℃ | |
| Tipo | 1 N-channel | |
| Drenin Source Voltage (Vdss) | 100V | |
| Corriente de drenaje continuo (Id) | 70A | |
| Drain Source On Resistance (RDS(on)-Vgs,Id) | 15mΩ@10V,35A | |
| Disipación de energía (Pd) | 200W | |
| Gate Threshold Voltage (Vgs (th).Id) | 2V@250uA | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 260pF@25V | |
| Capacitación de entradas (Ciss-Vds) | 2.7nF |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.5210 | $ 0.5210 |
| 10+ | $0.4211 | $ 4.2110 |
| 50+ | $0.3521 | $ 17.6050 |
| 100+ | $0.2996 | $ 29.9600 |
| 500+ | $0.2759 | $ 137.9500 |
| 1000+ | $0.2614 | $ 261.4000 |
| 2000+ | $0.2578 | $ 515.6000 |
| 4000+ | $0.2560 | $ 1024.0000 |
