| Fabricante | |
| Código de Pieza del Fabricante | SVT085R5NT |
| Código de Pieza EBEE | E82897720 |
| Paquete | TO-220 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 85V 120A 160W 4.5mΩ@10V,50A 2V@250uA TO-220 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.5890 | $ 0.5890 |
| 10+ | $0.5262 | $ 5.2620 |
| 50+ | $0.4524 | $ 22.6200 |
| 100+ | $0.4225 | $ 42.2500 |
| 500+ | $0.4037 | $ 201.8500 |
| 1000+ | $0.3943 | $ 394.3000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Hangzhou Silan Microelectronics SVT085R5NT | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 4.5mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 17pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 160W | |
| Drain to Source Voltage | 85V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 120A | |
| Ciss-Input Capacitance | 4.281nF | |
| Output Capacitance(Coss) | 669pF | |
| Gate Charge(Qg) | 68nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.5890 | $ 0.5890 |
| 10+ | $0.5262 | $ 5.2620 |
| 50+ | $0.4524 | $ 22.6200 |
| 100+ | $0.4225 | $ 42.2500 |
| 500+ | $0.4037 | $ 201.8500 |
| 1000+ | $0.3943 | $ 394.3000 |
