| Fabricante | |
| Código de Pieza del Fabricante | SVF7N65CMJ |
| Código de Pieza EBEE | E8403825 |
| Paquete | TO-251-3 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 650V 7A 90W 1.1Ω@10V,3.5A 4V@250uA 1 N-channel TO-251-3 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.3775 | $ 1.8875 |
| 50+ | $0.2972 | $ 14.8600 |
| 150+ | $0.2619 | $ 39.2850 |
| 525+ | $0.2185 | $ 114.7125 |
| 2475+ | $0.1992 | $ 493.0200 |
| 4500+ | $0.1880 | $ 846.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Hangzhou Silan Microelectronics SVF7N65CMJ | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 1.1Ω@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 9pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 90W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 789pF | |
| Output Capacitance(Coss) | 98pF | |
| Gate Charge(Qg) | 21nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 5+ | $0.3775 | $ 1.8875 |
| 50+ | $0.2972 | $ 14.8600 |
| 150+ | $0.2619 | $ 39.2850 |
| 525+ | $0.2185 | $ 114.7125 |
| 2475+ | $0.1992 | $ 493.0200 |
| 4500+ | $0.1880 | $ 846.0000 |
