| Fabricante | |
| Código de Pieza del Fabricante | SVF7N65CD |
| Código de Pieza EBEE | E8467750 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | None |
| Descripción | 650V 7A 89W 1.4Ω@10V,3.5A 4V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.4900 | $ 0.4900 |
| 10+ | $0.3872 | $ 3.8720 |
| 30+ | $0.3438 | $ 10.3140 |
| 100+ | $0.2892 | $ 28.9200 |
| 500+ | $0.2522 | $ 126.1000 |
| 1000+ | $0.2378 | $ 237.8000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Hangzhou Silan Microelectronics SVF7N65CD | |
| RoHS | ||
| RDS (on) | - | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 89W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 7A |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.4900 | $ 0.4900 |
| 10+ | $0.3872 | $ 3.8720 |
| 30+ | $0.3438 | $ 10.3140 |
| 100+ | $0.2892 | $ 28.9200 |
| 500+ | $0.2522 | $ 126.1000 |
| 1000+ | $0.2378 | $ 237.8000 |
