| Fabricante | |
| Código de Pieza del Fabricante | SVF6N60D |
| Código de Pieza EBEE | E868778 |
| Paquete | TO-252-2(DPAK) |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 600V 6A 1.35Ω@10V,3A 125W 4V@250uA 1 N-channel TO-252-2(DPAK) MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.4240 | $ 0.4240 |
| 10+ | $0.3289 | $ 3.2890 |
| 30+ | $0.2882 | $ 8.6460 |
| 100+ | $0.2369 | $ 23.6900 |
| 500+ | $0.2143 | $ 107.1500 |
| 1000+ | $0.2007 | $ 200.7000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Hangzhou Silan Microelectronics SVF6N60D | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 1.35Ω@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 2.7pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 125W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 6A | |
| Ciss-Input Capacitance | 690.7pF | |
| Output Capacitance(Coss) | 83.6pF | |
| Gate Charge(Qg) | 13.32nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.4240 | $ 0.4240 |
| 10+ | $0.3289 | $ 3.2890 |
| 30+ | $0.2882 | $ 8.6460 |
| 100+ | $0.2369 | $ 23.6900 |
| 500+ | $0.2143 | $ 107.1500 |
| 1000+ | $0.2007 | $ 200.7000 |
