| Fabricante | |
| Código de Pieza del Fabricante | SVF12N65F |
| Código de Pieza EBEE | E8467745 |
| Paquete | TO-220F-3 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | TO-220F-3 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.4666 | $ 0.4666 |
| 10+ | $0.3622 | $ 3.6220 |
| 50+ | $0.3180 | $ 15.9000 |
| 100+ | $0.2626 | $ 26.2600 |
| 500+ | $0.2373 | $ 118.6500 |
| 1000+ | $0.2231 | $ 223.1000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Hangzhou Silan Microelectronics SVF12N65F | |
| RoHS | ||
| RDS (on) | 640mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 15pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 210W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 1.39nF | |
| Gate Charge(Qg) | 33nC@520V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.4666 | $ 0.4666 |
| 10+ | $0.3622 | $ 3.6220 |
| 50+ | $0.3180 | $ 15.9000 |
| 100+ | $0.2626 | $ 26.2600 |
| 500+ | $0.2373 | $ 118.6500 |
| 1000+ | $0.2231 | $ 223.1000 |
