| Fabricante | |
| Código de Pieza del Fabricante | SVD1055SATR |
| Código de Pieza EBEE | E82761105 |
| Paquete | SOP-8 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | SOP-8 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.3108 | $ 0.3108 |
| 10+ | $0.2746 | $ 2.7460 |
| 30+ | $0.2595 | $ 7.7850 |
| 100+ | $0.2399 | $ 23.9900 |
| 500+ | $0.2037 | $ 101.8500 |
| 1000+ | $0.1992 | $ 199.2000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Hangzhou Silan Microelectronics SVD1055SATR | |
| RoHS | ||
| Tipo | N-Channel + P-Channel | |
| RDS (on) | 175mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 20.5pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Pd - Power Dissipation | 2W | |
| Drain to Source Voltage | 55V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 17A | |
| Ciss-Input Capacitance | 450pF | |
| Gate Charge(Qg) | - |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.3108 | $ 0.3108 |
| 10+ | $0.2746 | $ 2.7460 |
| 30+ | $0.2595 | $ 7.7850 |
| 100+ | $0.2399 | $ 23.9900 |
| 500+ | $0.2037 | $ 101.8500 |
| 1000+ | $0.1992 | $ 199.2000 |
