| Fabricante | |
| Código de Pieza del Fabricante | GBS032R4PMAR |
| Código de Pieza EBEE | E828324646 |
| Paquete | PDFN5x6-8L |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | PDFN-8L(5x6) MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.2475 | $ 0.2475 |
| 10+ | $0.2144 | $ 2.1440 |
| 30+ | $0.2002 | $ 6.0060 |
| 100+ | $0.1829 | $ 18.2900 |
| 500+ | $0.1750 | $ 87.5000 |
| 1000+ | $0.1703 | $ 170.3000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | GOSEMICON GBS032R4PMAR | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 2.5mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 100pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 83W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Current - Continuous Drain(Id) | 180A | |
| Ciss-Input Capacitance | 2.1nF | |
| Gate Charge(Qg) | 50nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.2475 | $ 0.2475 |
| 10+ | $0.2144 | $ 2.1440 |
| 30+ | $0.2002 | $ 6.0060 |
| 100+ | $0.1829 | $ 18.2900 |
| 500+ | $0.1750 | $ 87.5000 |
| 1000+ | $0.1703 | $ 170.3000 |
