| Fabricante | |
| Código de Pieza del Fabricante | GBS030R8TLAR |
| Código de Pieza EBEE | E828324649 |
| Paquete | TOLL-8 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 30V 130A 1.25mΩ@10V 83W 2V@250uA TOLL-8 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.5715 | $ 0.5715 |
| 10+ | $0.4607 | $ 4.6070 |
| 30+ | $0.4053 | $ 12.1590 |
| 100+ | $0.3499 | $ 34.9900 |
| 500+ | $0.3167 | $ 158.3500 |
| 1000+ | $0.2993 | $ 299.3000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | GOSEMICON GBS030R8TLAR | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 1.25mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 150pF | |
| Pd - Power Dissipation | 83W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 200A | |
| Ciss-Input Capacitance | 4.3nF | |
| Output Capacitance(Coss) | 1.9nF | |
| Gate Charge(Qg) | 72nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.5715 | $ 0.5715 |
| 10+ | $0.4607 | $ 4.6070 |
| 30+ | $0.4053 | $ 12.1590 |
| 100+ | $0.3499 | $ 34.9900 |
| 500+ | $0.3167 | $ 158.3500 |
| 1000+ | $0.2993 | $ 299.3000 |
