| Fabricante | |
| Código de Pieza del Fabricante | SI2310A |
| Código de Pieza EBEE | E85380684 |
| Paquete | SOT-23 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 60V 3A 1.2W 92mΩ@4.5V,2A 2V@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0386 | $ 0.7720 |
| 200+ | $0.0305 | $ 6.1000 |
| 600+ | $0.0265 | $ 15.9000 |
| 3000+ | $0.0235 | $ 70.5000 |
| 9000+ | $0.0211 | $ 189.9000 |
| 21000+ | $0.0198 | $ 415.8000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | FUXINSEMI SI2310A | |
| RoHS | ||
| RDS (on) | 100mΩ@10V;120mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 17pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.2W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 330pF | |
| Output Capacitance(Coss) | 90pF | |
| Gate Charge(Qg) | 5.1nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 20+ | $0.0386 | $ 0.7720 |
| 200+ | $0.0305 | $ 6.1000 |
| 600+ | $0.0265 | $ 15.9000 |
| 3000+ | $0.0235 | $ 70.5000 |
| 9000+ | $0.0211 | $ 189.9000 |
| 21000+ | $0.0198 | $ 415.8000 |
