10% off
| Fabricante | |
| Código de Pieza del Fabricante | SI2301CDS |
| Código de Pieza EBEE | E85290223 |
| Paquete | SOT-23 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 20V 3A 400mW 112mΩ@4.5V,2.8A 1V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 50+ | $0.0185 | $ 0.9250 |
| 500+ | $0.0148 | $ 7.4000 |
| 3000+ | $0.0118 | $ 35.4000 |
| 6000+ | $0.0105 | $ 63.0000 |
| 24000+ | $0.0095 | $ 228.0000 |
| 51000+ | $0.0089 | $ 453.9000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | FUXINSEMI SI2301CDS | |
| RoHS | ||
| RDS (on) | 142mΩ@2.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 80pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 400mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 400mV | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 500pF | |
| Gate Charge(Qg) | [email protected] |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 50+ | $0.0185 | $ 0.9250 |
| 500+ | $0.0148 | $ 7.4000 |
| 3000+ | $0.0118 | $ 35.4000 |
| 6000+ | $0.0105 | $ 63.0000 |
| 24000+ | $0.0095 | $ 228.0000 |
| 51000+ | $0.0089 | $ 453.9000 |
