| Fabricante | |
| Código de Pieza del Fabricante | IHW20N135R5F |
| Código de Pieza EBEE | E87467022 |
| Paquete | TO-247-3 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 333W 40A 1.35kV TO-247-3 IGBT Transistors / Modules ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $2.1800 | $ 2.1800 |
| 10+ | $1.8227 | $ 18.2270 |
| 30+ | $1.6274 | $ 48.8220 |
| 90+ | $1.4052 | $ 126.4680 |
| 510+ | $1.3067 | $ 666.4170 |
| 990+ | $1.2623 | $ 1249.6770 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,Transistores IGBT / Módulos | |
| Hoja de Datos | FUXINSEMI IHW20N135R5F | |
| RoHS | ||
| Temperatura de funcionamiento | -40℃~+175℃ | |
| Colector-Emiter Breakdown Voltage (Vces) | 1.35kV | |
| Gate-Emitter Threshold Voltage (Vge (Vge (th) .Ic) | 4.8V@1mA | |
| Pd - Power Dissipation | 333W | |
| IGBT Type | - | |
| Gate Charge(Qg) | 175nC@15V | |
| Td(off) | 204ns | |
| Td(on) | - | |
| Reverse Transfer Capacitance (Cres) | 57pF | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 1.02mJ | |
| Turn-On Energy (Eon) | 1.02mJ | |
| Input Capacitance(Cies) | 1.781nF | |
| Pulsed Current- Forward(Ifm) | 60A | |
| Output Capacitance(Coes) | 95pF |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $2.1800 | $ 2.1800 |
| 10+ | $1.8227 | $ 18.2270 |
| 30+ | $1.6274 | $ 48.8220 |
| 90+ | $1.4052 | $ 126.4680 |
| 510+ | $1.3067 | $ 666.4170 |
| 990+ | $1.2623 | $ 1249.6770 |
