| Fabricante | |
| Código de Pieza del Fabricante | DOD30N02 |
| Código de Pieza EBEE | E841416024 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 20V 30A 10mΩ@4.5V,15A 20W 1.2V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 10+ | $0.0677 | $ 0.6770 |
| 100+ | $0.0535 | $ 5.3500 |
| 300+ | $0.0465 | $ 13.9500 |
| 2500+ | $0.0411 | $ 102.7500 |
| 5000+ | $0.0369 | $ 184.5000 |
| 10000+ | $0.0348 | $ 348.0000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Hoja de Datos | DOINGTER DOD30N02 | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 10mΩ@4.5V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 160pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 20W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 1.5nF | |
| Gate Charge(Qg) | [email protected] |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 10+ | $0.0677 | $ 0.6770 |
| 100+ | $0.0535 | $ 5.3500 |
| 300+ | $0.0465 | $ 13.9500 |
| 2500+ | $0.0411 | $ 102.7500 |
| 5000+ | $0.0369 | $ 184.5000 |
| 10000+ | $0.0348 | $ 348.0000 |
