| Fabricante | |
| Código de Pieza del Fabricante | DMTH8003SPS-13 |
| Código de Pieza EBEE | E8434455 |
| Paquete | PowerDI5060-8 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | 80V 100A 2.9W 3.9mΩ@10V,30A 4V@250uA 1 N-Channel PowerDI5060-8 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.3287 | $ 1.3287 |
| 10+ | $1.1739 | $ 11.7390 |
| 30+ | $1.0894 | $ 32.6820 |
| 100+ | $0.9921 | $ 99.2100 |
| 500+ | $0.9507 | $ 475.3500 |
| 1000+ | $0.9315 | $ 931.5000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | Diodes Incorporated DMTH8003SPS-13 | |
| RoHS | ||
| RDS (on) | 3.9mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+175℃ | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 2.9W | |
| Drain to Source Voltage | 80V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 8.952nF | |
| Gate Charge(Qg) | 124.3nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $1.3287 | $ 1.3287 |
| 10+ | $1.1739 | $ 11.7390 |
| 30+ | $1.0894 | $ 32.6820 |
| 100+ | $0.9921 | $ 99.2100 |
| 500+ | $0.9507 | $ 475.3500 |
| 1000+ | $0.9315 | $ 931.5000 |
