| Fabricante | |
| Código de Pieza del Fabricante | AUN050N08BGL |
| Código de Pieza EBEE | E818723005 |
| Paquete | DFN5x6-8 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 85V 65A 151W 4.3mΩ 2.1V 1 N-Channel DFN(5x6) MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.4605 | $ 0.4605 |
| 10+ | $0.4083 | $ 4.0830 |
| 30+ | $0.3830 | $ 11.4900 |
| 100+ | $0.3561 | $ 35.6100 |
| 500+ | $0.3419 | $ 170.9500 |
| 1000+ | $0.3339 | $ 333.9000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | ANHI AUN050N08BGL | |
| RoHS | ||
| Tipo | N-Channel | |
| RDS (on) | 5mΩ@10V | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 107.1pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 151W | |
| Drain to Source Voltage | 85V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 4.553nF | |
| Output Capacitance(Coss) | 1.215nF | |
| Gate Charge(Qg) | 63.7nC@10V |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.4605 | $ 0.4605 |
| 10+ | $0.4083 | $ 4.0830 |
| 30+ | $0.3830 | $ 11.4900 |
| 100+ | $0.3561 | $ 35.6100 |
| 500+ | $0.3419 | $ 170.9500 |
| 1000+ | $0.3339 | $ 333.9000 |
