| Fabricante | |
| Código de Pieza del Fabricante | ASD65R350E |
| Código de Pieza EBEE | E85440010 |
| Paquete | TO-252 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | - |
| Descripción | 700V 11A 350mΩ 83W 3.5V 1 N-channel TO-252 MOSFETs ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.6166 | $ 0.6166 |
| 10+ | $0.5177 | $ 5.1770 |
| 30+ | $0.4698 | $ 14.0940 |
| 100+ | $0.4312 | $ 43.1200 |
| 500+ | $0.3972 | $ 198.6000 |
| 1000+ | $0.3786 | $ 378.6000 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Transestantes/Thyristors ,MOSFETs | |
| Hoja de Datos | ANHI ASD65R350E | |
| RoHS | ||
| RDS (on) | 350mΩ | |
| Temperatura de funcionamiento - | -55℃~+150℃ | |
| Transferencia Reversacita Capacitance (Crss-Vds) | 5.3pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 83W | |
| Drain to Source Voltage | 700V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Current - Continuous Drain(Id) | 11A | |
| Ciss-Input Capacitance | 901pF | |
| Gate Charge(Qg) | - |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $0.6166 | $ 0.6166 |
| 10+ | $0.5177 | $ 5.1770 |
| 30+ | $0.4698 | $ 14.0940 |
| 100+ | $0.4312 | $ 43.1200 |
| 500+ | $0.3972 | $ 198.6000 |
| 1000+ | $0.3786 | $ 378.6000 |
