| Hersteller | |
| Hersteller-Teilenummer | WSB5558N-2/TR |
| EBEE-Teilenummer | E8240198 |
| Gehäuse | DFN1006-2L |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V Independent Type 450mV@100mA 100mA DFN1006-2L Schottky Diodes ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0463 | $ 0.4630 |
| 100+ | $0.0369 | $ 3.6900 |
| 300+ | $0.0322 | $ 9.6600 |
| 1000+ | $0.0287 | $ 28.7000 |
| 5000+ | $0.0258 | $ 129.0000 |
| 10000+ | $0.0244 | $ 244.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Dioden ,Schottky Dioden | |
| Datenblatt | WILLSEMI(Will Semicon) WSB5558N-2/TR | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 30uA@30V | |
| Diodenkonfiguration | Independent | |
| Spannung - DC Reverse (Vr) (Max) | 30V | |
| Voltage - Forward(Vf@If) | 450mV@100mA | |
| Current - Rectified | 100mA | |
| Non-Repetitive Peak Forward Surge Current | 1A |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0463 | $ 0.4630 |
| 100+ | $0.0369 | $ 3.6900 |
| 300+ | $0.0322 | $ 9.6600 |
| 1000+ | $0.0287 | $ 28.7000 |
| 5000+ | $0.0258 | $ 129.0000 |
| 10000+ | $0.0244 | $ 244.0000 |
