| Hersteller | |
| Hersteller-Teilenummer | SIHLL110TR-GE3 |
| EBEE-Teilenummer | E8727482 |
| Gehäuse | SOT-223 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 930mA 0.54Ω@5.0V,0.9A 3.1W 2V@250uA 1 N-channel SOT-223-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4242 | $ 0.4242 |
| 10+ | $0.3806 | $ 3.8060 |
| 30+ | $0.3587 | $ 10.7610 |
| 100+ | $0.3353 | $ 33.5300 |
| 500+ | $0.3229 | $ 161.4500 |
| 1000+ | $0.3166 | $ 316.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | ||
| Datenblatt | VISHAY SIHLL110TR-GE3 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 540mΩ@5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 15pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 3.1W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 930mA | |
| Ciss-Input Capacitance | 250pF | |
| Output Capacitance(Coss) | 80pF | |
| Gate Charge(Qg) | 6.1nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4242 | $ 0.4242 |
| 10+ | $0.3806 | $ 3.8060 |
| 30+ | $0.3587 | $ 10.7610 |
| 100+ | $0.3353 | $ 33.5300 |
| 500+ | $0.3229 | $ 161.4500 |
| 1000+ | $0.3166 | $ 316.6000 |
