| Hersteller | |
| Hersteller-Teilenummer | IRFD9110PBF |
| EBEE-Teilenummer | E847488 |
| Gehäuse | HVMDIP-4 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 0.49A 1.3W 1.2Ω@10V,0.42A 2V@250uA 1 Piece P-Channel HVMDIP-4 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.0729 | $ 1.0729 |
| 10+ | $0.8823 | $ 8.8230 |
| 30+ | $0.7870 | $ 23.6100 |
| 100+ | $0.6318 | $ 63.1800 |
| 500+ | $0.5749 | $ 287.4500 |
| 1000+ | $0.5457 | $ 545.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | ||
| Datenblatt | VISHAY IRFD9110PBF | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 1.2Ω@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 18pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.3W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 490mA | |
| Ciss-Input Capacitance | 200pF | |
| Output Capacitance(Coss) | 84pF | |
| Gate Charge(Qg) | 8.7nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.0729 | $ 1.0729 |
| 10+ | $0.8823 | $ 8.8230 |
| 30+ | $0.7870 | $ 23.6100 |
| 100+ | $0.6318 | $ 63.1800 |
| 500+ | $0.5749 | $ 287.4500 |
| 1000+ | $0.5457 | $ 545.7000 |
