| Hersteller | |
| Hersteller-Teilenummer | ES2D-E3/52T |
| EBEE-Teilenummer | E8183019 |
| Gehäuse | DO-214AA(SMB) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 900mV@2A 30ns 2A 200V DO-214AA(SMB) Fast Recovery / High Efficiency Diodes ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1318 | $ 0.6590 |
| 50+ | $0.1074 | $ 5.3700 |
| 150+ | $0.0952 | $ 14.2800 |
| 750+ | $0.0784 | $ 58.8000 |
| 2250+ | $0.0711 | $ 159.9750 |
| 5250+ | $0.0675 | $ 354.3750 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Dioden ,Schnelle Erholung / Hocheffizienz Dioden | |
| Datenblatt | Vishay Intertech ES2D-E3/52T | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 10uA@200V | |
| Diodenkonfiguration | 1 Independent | |
| Reverse Recovery Time (trr) | 30ns | |
| Spannung - DC Reverse (Vr) (Max) | 200V | |
| Voltage - Forward(Vf@If) | 900mV@2A | |
| Current - Rectified | 2A | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1318 | $ 0.6590 |
| 50+ | $0.1074 | $ 5.3700 |
| 150+ | $0.0952 | $ 14.2800 |
| 750+ | $0.0784 | $ 58.8000 |
| 2250+ | $0.0711 | $ 159.9750 |
| 5250+ | $0.0675 | $ 354.3750 |
