15% off
| Hersteller | |
| Hersteller-Teilenummer | 5N20-VB |
| EBEE-Teilenummer | E820417645 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 200V 5A 850mΩ@10V 1 N-channel TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3738 | $ 0.3738 |
| 10+ | $0.2943 | $ 2.9430 |
| 30+ | $0.2592 | $ 7.7760 |
| 100+ | $0.2173 | $ 21.7300 |
| 500+ | $0.1971 | $ 98.5500 |
| 1000+ | $0.1863 | $ 186.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | ||
| Datenblatt | VBsemi Elec 5N20-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 850mΩ@10V | |
| Reverse Transfer Capacitance (Crss-Vds) | 30pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 42W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 185pF | |
| Output Capacitance(Coss) | 100pF | |
| Gate Charge(Qg) | 13nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3738 | $ 0.3738 |
| 10+ | $0.2943 | $ 2.9430 |
| 30+ | $0.2592 | $ 7.7760 |
| 100+ | $0.2173 | $ 21.7300 |
| 500+ | $0.1971 | $ 98.5500 |
| 1000+ | $0.1863 | $ 186.3000 |
