| Hersteller | |
| Hersteller-Teilenummer | MMBT8550C |
| EBEE-Teilenummer | E8109427 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 25V 350mW 100@100mA,1V 600mA PNP SOT-23 Bipolar (BJT) ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.0145 | $ 0.0145 |
| 10+ | $0.0112 | $ 0.1120 |
| 30+ | $0.0094 | $ 0.2820 |
| 100+ | $0.0083 | $ 0.8300 |
| 600+ | $0.0074 | $ 4.4400 |
| 1200+ | $0.0068 | $ 8.1600 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,Bipolar (BJT) ,Single Bipolar Transistors | |
| Datenblatt | ST(Semtech) MMBT8550C | |
| RoHS | ||
| Temperatur | - | |
| Typ | PNP | |
| Collector - Emitter Voltage VCEO | 25V | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 PNP | |
| Pd - Power Dissipation | 350mW | |
| DC Current Gain | 100 | |
| Emitter-Base Voltage(Vebo) | 6V | |
| Current - Collector Cutoff | 100nA | |
| Vce Saturation(VCE(sat)) | 500mV | |
| Transition frequency(fT) | 100MHz |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.0145 | $ 0.0145 |
| 10+ | $0.0112 | $ 0.1120 |
| 30+ | $0.0094 | $ 0.2820 |
| 100+ | $0.0083 | $ 0.8300 |
| 600+ | $0.0074 | $ 4.4400 |
| 1200+ | $0.0068 | $ 8.1600 |
