5% off
| Hersteller | |
| Hersteller-Teilenummer | 2SD211 |
| EBEE-Teilenummer | E82907853 |
| Gehäuse | TO-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | TO-3 Bipolar (BJT) ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.4284 | $ 1.4284 |
| 10+ | $1.1810 | $ 11.8100 |
| 50+ | $1.0453 | $ 52.2650 |
| 100+ | $0.8915 | $ 89.1500 |
| 500+ | $0.8236 | $ 411.8000 |
| 1000+ | $0.7934 | $ 793.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,Bipolar (BJT) ,Single Bipolar Transistors | |
| Datenblatt | SPTECH 2SD211 | |
| RoHS | ||
| Typ | NPN | |
| Collector - Emitter Voltage VCEO | 60V | |
| Current - Collector(Ic) | 10A | |
| Number | 1 NPN | |
| Pd - Power Dissipation | 100W | |
| DC Current Gain | 30 | |
| Emitter-Base Voltage(Vebo) | 6V | |
| Current - Collector Cutoff | 100uA | |
| Vce Saturation(VCE(sat)) | 1.5V | |
| Transition frequency(fT) | 8MHz |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.4284 | $ 1.4284 |
| 10+ | $1.1810 | $ 11.8100 |
| 50+ | $1.0453 | $ 52.2650 |
| 100+ | $0.8915 | $ 89.1500 |
| 500+ | $0.8236 | $ 411.8000 |
| 1000+ | $0.7934 | $ 793.4000 |
