5% off
| Hersteller | |
| Hersteller-Teilenummer | 2N5886 |
| EBEE-Teilenummer | E82907954 |
| Gehäuse | TO-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | TO-3 Bipolar (BJT) ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6741 | $ 1.6741 |
| 10+ | $1.4219 | $ 14.2190 |
| 25+ | $1.2326 | $ 30.8150 |
| 100+ | $1.0707 | $ 107.0700 |
| 500+ | $0.9976 | $ 498.8000 |
| 1000+ | $0.9661 | $ 966.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,Bipolar (BJT) ,Single Bipolar Transistors | |
| Datenblatt | SPTECH 2N5886 | |
| RoHS | ||
| Temperatur | - | |
| Typ | NPN | |
| Collector - Emitter Voltage VCEO | 80V | |
| Current - Collector(Ic) | 25A | |
| Number | 1 NPN | |
| Pd - Power Dissipation | 200W | |
| DC Current Gain | 100 | |
| Emitter-Base Voltage(Vebo) | 5V | |
| Current - Collector Cutoff | 500uA | |
| Vce Saturation(VCE(sat)) | 4V | |
| Transition frequency(fT) | 4MHz |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6741 | $ 1.6741 |
| 10+ | $1.4219 | $ 14.2190 |
| 25+ | $1.2326 | $ 30.8150 |
| 100+ | $1.0707 | $ 107.0700 |
| 500+ | $0.9976 | $ 498.8000 |
| 1000+ | $0.9661 | $ 966.1000 |
