| Hersteller | |
| Hersteller-Teilenummer | 2SC5661T2LP |
| EBEE-Teilenummer | E85443923 |
| Gehäuse | VMT3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 20V 150mW 82@10mA,10V 50mA NPN VMT3 Bipolar (BJT) ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0688 | $ 0.3440 |
| 50+ | $0.0612 | $ 3.0600 |
| 150+ | $0.0574 | $ 8.6100 |
| 500+ | $0.0546 | $ 27.3000 |
| 2500+ | $0.0523 | $ 130.7500 |
| 5000+ | $0.0512 | $ 256.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,Bipolar (BJT) ,Bipolar RF Transistors | |
| Datenblatt | ROHM 2SC5661T2LP | |
| RoHS | ||
| Temperatur | -55℃~+150℃ | |
| Typ | NPN | |
| Collector - Emitter Voltage VCEO | 20V | |
| Current - Collector(Ic) | 50mA | |
| Number | 1 NPN | |
| Pd - Power Dissipation | 150mW | |
| Emitter-Base Voltage(Vebo) | 3V | |
| Current - Collector Cutoff | 500nA | |
| Transition frequency(fT) | 1.5GHz |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0688 | $ 0.3440 |
| 50+ | $0.0612 | $ 3.0600 |
| 150+ | $0.0574 | $ 8.6100 |
| 500+ | $0.0546 | $ 27.3000 |
| 2500+ | $0.0523 | $ 130.7500 |
| 5000+ | $0.0512 | $ 256.0000 |
