| Hersteller | |
| Hersteller-Teilenummer | MMUN2211LT3G |
| EBEE-Teilenummer | E8150229 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 35@5mA,10V 246mW 100mA 50V SOT-23 Digital Transistors ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0415 | $ 0.8300 |
| 200+ | $0.0342 | $ 6.8400 |
| 600+ | $0.0301 | $ 18.0600 |
| 2000+ | $0.0277 | $ 55.4000 |
| 10000+ | $0.0256 | $ 256.0000 |
| 20000+ | $0.0244 | $ 488.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistors/Thyristors ,Digital Transistors | |
| Datenblatt | onsemi MMUN2211LT3G | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | NPN | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Collector - Emitter Voltage VCEO | 50V | |
| Current - Collector(Ic) | 100mA | |
| Number | 1 NPN (Pre-Biased) | |
| Pd - Power Dissipation | 246mW | |
| DC Current Gain | 35 | |
| Current - Collector Cutoff | 100nA | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Output Voltage(VO(on)) | 200mV |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0415 | $ 0.8300 |
| 200+ | $0.0342 | $ 6.8400 |
| 600+ | $0.0301 | $ 18.0600 |
| 2000+ | $0.0277 | $ 55.4000 |
| 10000+ | $0.0256 | $ 256.0000 |
| 20000+ | $0.0244 | $ 488.0000 |
