| Hersteller | |
| Hersteller-Teilenummer | MMBFJ201 |
| EBEE-Teilenummer | E8891687 |
| Gehäuse | SOT-23-3L |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 350mW 200uA@20V N-channel 40V SOT-23-3L JFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1641 | $ 0.8205 |
| 50+ | $0.1303 | $ 6.5150 |
| 150+ | $0.1157 | $ 17.3550 |
| 500+ | $0.0976 | $ 48.8000 |
| 3000+ | $0.0876 | $ 262.8000 |
| 6000+ | $0.0827 | $ 496.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,JFETs | |
| Datenblatt | onsemi MMBFJ201 | |
| RoHS | ||
| Temperatur | -55℃~+150℃@(Tj) | |
| RDS(on) | - | |
| FET Typ | - | |
| Pd - Power Dissipation | 350mW | |
| Ciss-Input Capacitance | - | |
| Drain Current (Idss) | - | |
| Gate-Source Breakdown Voltage (Vgss) | 40V | |
| Gate-Source Cutoff Voltage (VGS(off)) | 300mV@10nA |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1641 | $ 0.8205 |
| 50+ | $0.1303 | $ 6.5150 |
| 150+ | $0.1157 | $ 17.3550 |
| 500+ | $0.0976 | $ 48.8000 |
| 3000+ | $0.0876 | $ 262.8000 |
| 6000+ | $0.0827 | $ 496.2000 |
