90% off
| Hersteller | |
| Hersteller-Teilenummer | LMUN5112T1G |
| EBEE-Teilenummer | E8723988 |
| Gehäuse | SC-70(SOT323) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 60@5mA,10V 1 PNP pre-bias 202mW 100mA 50V SC-70(SOT323) Digital Transistors ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0021 | $ 0.0420 |
| 200+ | $0.0016 | $ 0.3200 |
| 600+ | $0.0014 | $ 0.8400 |
| 3000+ | $0.0012 | $ 3.6000 |
| 9000+ | $0.0011 | $ 9.9000 |
| 21000+ | $0.0010 | $ 21.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,Bipolar (BJT) ,Single, Pre-Biased Bipolar Transistors | |
| Datenblatt | LRC LMUN5112T1G | |
| RoHS | ||
| Temperatur | -55℃~+150℃ | |
| Typ | PNP | |
| Eingangswiderstand | 22kΩ | |
| Widerstand Ratio | 1 | |
| Collector - Emitter Voltage VCEO | 50V | |
| Current - Collector(Ic) | 100mA | |
| Number | 1 PNP Pre-Biased | |
| Pd - Power Dissipation | 202mW | |
| DC Current Gain | 60 | |
| Current - Collector Cutoff | 100nA | |
| Output Voltage(VO(on)) | 200mV |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0021 | $ 0.0420 |
| 200+ | $0.0016 | $ 0.3200 |
| 600+ | $0.0014 | $ 0.8400 |
| 3000+ | $0.0012 | $ 3.6000 |
| 9000+ | $0.0011 | $ 9.9000 |
| 21000+ | $0.0010 | $ 21.0000 |
