| Hersteller | |
| Hersteller-Teilenummer | GD25LQ32EEIGR |
| EBEE-Teilenummer | E82939873 |
| Gehäuse | USON-8-EP(2x3) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| Beschreibung | 1.65V~2V 133MHz 32Mbit USON-8-EP(2x3) NAND FLASH ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.1861 | $ 1.1861 |
| 10+ | $1.0146 | $ 10.1460 |
| 30+ | $0.9288 | $ 27.8640 |
| 100+ | $0.8447 | $ 84.4700 |
| 500+ | $0.5176 | $ 258.8000 |
| 1000+ | $0.4906 | $ 490.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Memory ,NAND FLASH | |
| Datenblatt | GigaDevice Semicon Beijing GD25LQ32EEIGR | |
| RoHS | ||
| Interface | SPI | |
| Voltage - Supply | 1.65V~2V | |
| Clock Frequency | 133MHz | |
| Memory Size | 32Mbit | |
| Page Programming Time (Tpp) | 400us | |
| Data Retention - TDR (Year) | 20 Years | |
| Standby Supply Current | 10uA | |
| Program / Erase Cycles | 100,000 cycles | |
| Block Erase Time(tBE) | 200ms@(64KB) |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.1861 | $ 1.1861 |
| 10+ | $1.0146 | $ 10.1460 |
| 30+ | $0.9288 | $ 27.8640 |
| 100+ | $0.8447 | $ 84.4700 |
| 500+ | $0.5176 | $ 258.8000 |
| 1000+ | $0.4906 | $ 490.6000 |
