| Hersteller | |
| Hersteller-Teilenummer | BRCS120N03YB |
| EBEE-Teilenummer | E87429740 |
| Gehäuse | DFN-8L(3x3) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 20A 16mΩ@4.5V 15.5W 1.8V@250uA 1 N-Channel DFN-8L(3x3) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1215 | $ 0.6075 |
| 50+ | $0.1051 | $ 5.2550 |
| 150+ | $0.0981 | $ 14.7150 |
| 500+ | $0.0894 | $ 44.7000 |
| 2500+ | $0.0855 | $ 213.7500 |
| 5000+ | $0.0831 | $ 415.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Foshan Blue Rocket Elec BRCS120N03YB | |
| RoHS | ||
| RDS(on) | 16mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 63pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 15.5W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | - | |
| Gate Charge(Qg) | 13.6nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1215 | $ 0.6075 |
| 50+ | $0.1051 | $ 5.2550 |
| 150+ | $0.0981 | $ 14.7150 |
| 500+ | $0.0894 | $ 44.7000 |
| 2500+ | $0.0855 | $ 213.7500 |
| 5000+ | $0.0831 | $ 415.5000 |
