| Hersteller | |
| Hersteller-Teilenummer | 1N4935G-T |
| EBEE-Teilenummer | E85245049 |
| Gehäuse | DO-41 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 1.2V@1A 200ns 1A 200V DO-41 Fast Recovery / High Efficiency Diodes ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0926 | $ 0.4630 |
| 50+ | $0.0762 | $ 3.8100 |
| 150+ | $0.0681 | $ 10.2150 |
| 500+ | $0.0620 | $ 31.0000 |
| 2500+ | $0.0570 | $ 142.5000 |
| 5000+ | $0.0546 | $ 273.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Dioden ,Schnelle Erholung / Hocheffizienz Dioden | |
| Datenblatt | Diodes Incorporated 1N4935G-T | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 5uA@200V | |
| Reverse Recovery Time (trr) | 200ns | |
| Spannung - DC Reverse (Vr) (Max) | 200V | |
| Voltage - Forward(Vf@If) | 1.2V@1A | |
| Current - Rectified | 1A | |
| Non-Repetitive Peak Forward Surge Current | 30A | |
| Operating Junction Temperature Range | -65℃~+150℃ |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0926 | $ 0.4630 |
| 50+ | $0.0762 | $ 3.8100 |
| 150+ | $0.0681 | $ 10.2150 |
| 500+ | $0.0620 | $ 31.0000 |
| 2500+ | $0.0570 | $ 142.5000 |
| 5000+ | $0.0546 | $ 273.0000 |
